Transistor

Transistor RF : LDMOS RF power mosfet, transistor bipolar, dual gate mosfet

  • Rp‎ 600.000
    Rp‎ 600.000

  • Rp‎ 1.250.000
    Rp‎ 1.250.000

    Beli
    I
  • Rp‎ 1.700.000
    Rp‎ 1.700.000

    Beli
    I
  • Rp‎ 2.700.000
    Rp‎ 2.700.000

    Beli
    I
  • Rp‎ 3.000.000
    Rp‎ 3.000.000

    pemancar">pemancar/1000w-palet-fm-blf188xr" title="BLF188XR">BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    pemancar">pemancar/1000w-palet-fm-blf188xr" title="BLF188XR">BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial...

  • Rp‎ 3.000.000
    Rp‎ 3.000.000

    pemancar">pemancar/1000w-palet-fm-blf188xr" title="BLF188XR">BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

    pemancar">pemancar/1000w-palet-fm-blf188xr" title="BLF188XR">BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial...

  • Rp‎ 80.000
    Rp‎ 80.000
    1 rating(s)

  • Rp‎ 200.000
    Rp‎ 200.000
    1 rating(s)

  • Rp‎ 400.000
    Rp‎ 400.000
    1 rating(s)

  • Rp‎ 80.000
    Rp‎ 80.000

    RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.

    RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB...

  • Rp‎ 120.000
    Rp‎ 120.000

    RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in...

    RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W,...

  • Rp‎ 300.000
    Rp‎ 300.000

    RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.

    RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB...

Testimonial ( 49 )
(5,0/5)

Diulas oleh Priyo Basuki,
Priyo Basuki
Paket sudah datang semua termasuk RigExpert, matur nuwun
18-11-2016
Diulas oleh Eko Suhermanto,
Eko Suhermanto
Kemaren baru order, RigExpert sudah sampe tadi siang jam 10
18-11-2016
Diulas oleh Ahmad Wildan,
Ahmad Wildan
Josss...terusss....
08-11-2016