RD70HVF1

RD70HVF1

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Mitsubishi Electric

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RD70HVF1

RD70HVF1

RD70HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers
applications.
FEATURES
High power and High Gain:
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile Radio sets

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    RD70HVF1 is a MOS FET type transistor specifically
    designed for VHF/UHF High power amplifiers
    applications.
    FEATURES
    High power and High Gain:
    Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
    Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
    High Efficiency: 60%typ.on VHF Band
    High Efficiency: 55%typ.on UHF Band
    APPLICATION
    For output stage of high power amplifiers in VHF/UHF Band mobile Radio sets

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