MRF6V4300N
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MRF6V4300N

MRF6V4300N

Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. 
• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,
f = 450 MHz Power Gain 22 dB Drain Efficiency 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power

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 (4/5)  - 1 rating(s) - 1 review(s)
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Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. 
• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,
f = 450 MHz Power Gain 22 dB Drain Efficiency 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power

MRF6V4300N
Oleh Heriyanto P. pada 17 Oct 2019 (MRF6V4300N) :
(4/5

Hanya ada di rfkit

hanya di rfkit ketemu transistor ini

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