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MRF6V4300N
Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz.
• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,
f = 450 MHz Power Gain 22 dB Drain Efficiency 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power
Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz.
• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,
f = 450 MHz Power Gain 22 dB Drain Efficiency 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power
MRF6V4300N
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hanya di rfkit ketemu transistor ini
By Heriyanto P. the 2019-10-17