RD06HVF1

RD06HVF1

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Mitsubishi Electric

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RD06HVF1

RD06HVF1

RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.

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    RD06HVF1 is a MOS FET type transistor specifically
    designed for VHF RF power amplifiers applications.
    FEATURES
    High power gain:
    Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
    APPLICATION
    For output stage of high power amplifiers in
    VHF band mobile radio sets.

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