RF Parts RF Transistors RF power transistor : LDMOS RF power...

RF Transistors

RF power transistor : LDMOS RF power mosfet, bipolar bipolar, dual gate mosfet

BLF245
BLF245 30W VHF power MOS transistor
(5/5) on 1 rating(s)
700.000
BLF574
Out-of-Stock
BLF574 400 W LDMOS power transistor for broadcast applications and industrial applications in the HF and VHF band
(3/5) on 1 rating(s)
1.700.000
BLF578
Out-of-Stock
BLF578 1000W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band
(5/5) on 1 rating(s)
2.700.000
BLF188XRS

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
(5/5) on 1 rating(s)
3.000.000
BLF188XR

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
(5/5) on 1 rating(s)
3.500.000
PD55003
PD55003 is a 3W common source N-Channel with PowerSO-10 plastic package
(5/5) on 1 rating(s)
95.000
PD55015
PD55015 is a 15W common source N-Channel with PowerSO-10 plastic package
(5/5) on 1 rating(s)
200.000
PD55035
PD55035 is a 35W common source N-Channel with PowerSO-10 plastic package
(5/5) on 1 rating(s)
400.000
RD06HVF1

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.
(5/5) on 1 rating(s)
80.000
RD15HVF1

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.
(5/5) on 1 rating(s)
102.000
RD30HVF1

RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.
(5/5) on 1 rating(s)
380.000