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1.3 GHz Bidirectional I2C-bus controlled synthesizer

PD55015 merupakan 15W N-Channel Transistor dengan paket plastik PowerSO-10

BLF245 30W VHF power MOS transistor

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1.3 GHz Bidirectional I2C-bus controlled synthesizer, SO-20 package

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

PD55003 merupakan 3W N-Channel Transistor dengan paket plastik PowerSO-10

PD55035 merupakan 35W N-Channel Transistor dengan paket plastik PowerSO-10

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.

RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.