RD30HVF1
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RD30HVF1

RD30HVF1

RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
•High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.

380.000 (termasuk pajak) 380.000 (diluar pajak)
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 (5/5)  - 1 rating(s) - 1 review(s)
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RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
•High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.

Mitsubishi Electric
RD30HVF1
5 cm
5 cm
3 cm
0.05 kg
44 Barang
Oleh Arief S. pada 24 Mar 2017 (RD30HVF1) :
(5/5) 

Harga OKE

mosfet murah jaminan mutu

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