RD30HVF1

RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
•High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.

Rp 300.000
Reference:
RD30HVF1
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RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
•High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.

Detail produk
RD30HVF1
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5
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