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RD30HVF1
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
•High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
Rp 300.000
Customer ratings and reviews
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
•High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
