RD30HVF1

RD30HVF1

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Mitsubishi Electric

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RD30HVF1

RD30HVF1

RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
•High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.

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    RD30HVF1 is a MOS FET type transistor specifically
    designed for VHF RF power amplifiers applications.
    FEATURES
    •High power gain:
    Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
    •High Efficiency: 60%typ.
    APPLICATION
    For output stage of high power amplifiers in VHF band
    Mobile radio sets.

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