Komponen Pemancar

MRFE6VP61K25H
 1.8--600 MHz, 1250 W CW, 50 V,  N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 1250 Watts CW Operation

1.8--600 MHz, 300 W, 50 V, N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,at all Phase Angles• 300 Watts CW Output Power• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 300 Watts CW Operation

A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. The BLF184XR and BLF184XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 650 W pulsed; f = 108 MHz.

1W wideband transistor NPN 7 GHz dengan casing plastik 4-pin SOT223

N-Channel VHF/UHF Amplifier Transistor

Transistor NPN general-purpose

Transistor RF 2SC1971 dengan power output 6W yang didesain untuk frekuensi VHF

50V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET 1.8-600 MHz, 600W CW

Transistor Daya RF 1500W NXP MRF1K50H ini dirancang untuk menghasilkan 1.50kW CW pada tegangan 50V sehingga mengurangi jumlah transistor pada amplifier RF berdaya tinggi.

NXP MRFX1K80 RF Power LDMOS Transistor dirancang untuk menghasilkan 1800W pada tegangan 65V CW (Continuous Wave) untuk aplikasi dari 1MHz sampai 470MHz dan mampu menangani rasio tegangan berdiri 65: 1 (VSWR).