Komponen Pemancar

Coaxial relay Tohtsu CX600N-12, 12 Volt, SPDT, Type-N (3-N Female)

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Coax Relay Tohtsu CX140D, SPDT, 12Volt, Type-N Female Connector

Coax Relay Tohtsu CX140M, SPDT, 12Volt, UHF Female Connector

Coaxial relay REW-14 buatan Rusia mampu bekerja sampai 5-7kW di frekuensi 144 MHz

Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,f = 450 MHz Power Gain 22 dB Drain Efficiency 60%• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power

N–Channel MOSFETDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV channelfrequency bands.• Guaranteed Performance at 175 MHz, 50 V:Output Power — 300 WGain — 14 dB (16 dB Typ)Efficiency — 50%

MRFE6VP61K25H
 1.8--600 MHz, 1250 W CW, 50 V,  N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 1250 Watts CW Operation

1.8--600 MHz, 300 W, 50 V, N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,at all Phase Angles• 300 Watts CW Output Power• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 300 Watts CW Operation

A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. The BLF184XR and BLF184XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 650 W pulsed; f = 108 MHz.

1W wideband transistor NPN 7 GHz dengan casing plastik 4-pin SOT223