Rp 600.000
Ada 20 produk.
TSA5511
1.3 GHz Bidirectional I2C-bus controlled synthesizer
Rp 60.000
BLF245
BLF245 30W VHF power MOS transistor
Rp 700.000
TSA5511AT
1.3 GHz Bidirectional I2C-bus controlled synthesizer, SO-20 package
Rp 60.000
BLF188XRS
BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Rp 3.000.000
BLF188XR
BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Rp 3.500.000
RD06HVF1
RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.
Rp 80.000
RD15HVF1
RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.
Rp 102.000
RD30HVF1
RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.
Rp 380.000
RD70HVF1
RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets
Rp 500.000
BLF184XR
A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. The BLF184XR and BLF184XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 650 W pulsed; f = 108 MHz.
Rp 2.250.000
RA13H3340M
RF power modul untuk pemancar link frekuensi 330-400 MHz, RA13H3340M, 13 Watt, 12.5V
Rp 475.000
2SC1946A
2SC1946A merupakan transistor jenis NPN untuk penguat VHF dengan daya keluaran 30W
Rp 280.000