Daftar produk berdasarkan merek Mitsubishi Electric

Mitsubishi Electric

2SC1946A
2SC1946A merupakan transistor jenis NPN untuk penguat VHF dengan daya keluaran 30W
(5/5) on 1 rating(s)
280.000
2SC2694
Stok habis
2SC2694 merupakan transistor RF jenis NPN yang bekerja sampai VHF 175MHz dengan power out 70W.
(4/5) on 1 rating(s)
330.000
RA13H3340M
RF power modul untuk pemancar link frekuensi 330-400 MHz, RA13H3340M, 13 Watt, 12.5V
(5/5) on 1 rating(s)
475.000
RD06HVF1
RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.
(5/5) on 1 rating(s)
80.000
RD15HVF1
RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.
(5/5) on 1 rating(s)
102.000
RD30HVF1
RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.
(5/5) on 1 rating(s)
380.000
RD70HVF1
RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets
(5/5) on 1 rating(s)
500.000