Rp 600.000
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Bird 43 Wattmeter
Last items in stock
Bird 43 designed to measure both forward and reflected CW power in coaxial transmission lines under any load condition. With a full-scale accuracy of ± 5%, over 450 kHz to 2.7 GHz, power 100 mW to 10 KW and easy to quick change (QC) connectors to minimize the need for adaptors.
Rp 6.700.000
BLF188XR
BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Rp 3.500.000
MRF6V4300N
Out-of-Stock
Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,f = 450 MHz Power Gain 22 dB Drain Efficiency 60%• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power
Rp 800.000
MRF151G
Out-of-Stock
N–Channel MOSFETDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitter">transmitters/">transmitters for FM broadcast or TV channelfrequency bands.• Guaranteed Performance at 175 MHz, 50 V:Output Power — 300 WGain — 14 dB (16 dB Typ)Efficiency — 50%
Rp 1.000.000
MRFE6VP61K25H
Last items in stock
MRFE6VP61K25H
1.8--600 MHz, 1250 W CW, 50 V, N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 1250 Watts CW Operation
Rp 3.000.000
MRFE6VP6300H
1.8--600 MHz, 300 W, 50 V, N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,at all Phase Angles• 300 Watts CW Output Power• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 300 Watts CW Operation
Rp 1.450.000
BLF184XR
A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. The BLF184XR and BLF184XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 650 W pulsed; f = 108 MHz.
Rp 2.250.000
BFG591
1W NPN 7 GHz wideband transistor in a plastic 4-pin SOT223 package
Rp 17.000
MMBFJ310
N-Channel VHF/UHF Amplifier Transistor
Rp 4.000
BC847C
NPN general-purpose transistors
Rp 950
2SC1971
2SC1971 is 6W silicon NPN epixatial planar type transistor for VHF RF power amplifiers
Rp 50.000
MRFE6VP5600H
1.8-600 MHz, 600 W CW, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Rp 2.000.000