RF Parts

SD2942 is a gold metallized N-Channel MOSFET.
The SD2942offers 25% lower Rds(ON) than industry standard and 20% higher power saturation than ST SD2932. These characteristics make the SD2942 ideal for 50V DC very high power application up to 250 MHz.
Features
■ GOLD METALLIZATION
■ EXCELLENT THERMAL STABILITY■ COMMON SOURCE CONFIGURATION,PUSH PULL■ POUT = 350W MIN. WITH 15dB GAIN @175MHz

SD2932RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
- GOLD METALLIZATION- EXCELLENT THERMAL STABILITY- COMMON SOURCE CONFIGURATION, PUSH-PULL- POUT = 300W MIN. WITH 15 dB GAIN @175 MHz

A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. The BLF184XR and BLF184XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 650 W pulsed; f = 108 MHz.

1W NPN 7 GHz wideband transistor in a plastic 4-pin SOT223 package

N-Channel VHF/UHF Amplifier Transistor

NPN general-purpose transistors

2SC1971 is 6W silicon NPN epixatial planar type transistor for VHF RF power amplifiers

NXP MRF1K50H 1500W RF Power Transistor combines the highest RF output power with superior ruggedness and thermal performance. The transistor is designed to deliver 1.50kW CW at 50V and reduces the number of transistors in high-power RF amplifiers.

NXP MRFX1K80 RF Power LDMOS Transistor combines high RF output power, superior ruggedness, and thermal performance. The MRFX1K80 Transistor is designed to deliver 1800W at 65V CW (Continuous Wave) for applications from 1MHz to 470MHz and is capable of handling 65:1 voltage standing wave ratio (VSWR).

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band, the Ampleon BLF189XR supports CO2, plasma RF, radio and VHF applications.

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band