RF Parts

A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. The BLF184XR and BLF184XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 650 W pulsed; f = 108 MHz.

RA13H3340M RF Power Module, frequency range 330-400 MHz, power output 13 Watt, operation voltage 12.5v

2SC1946A is 30W NPN transistor for VHF RF power amplifier

1W NPN 7 GHz wideband transistor in a plastic 4-pin SOT223 package

N-Channel VHF/UHF Amplifier Transistor

NPN general-purpose transistors

2SC1971 is 6W silicon NPN epixatial planar type transistor for VHF RF power amplifiers

1.8-600 MHz, 600 W CW, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

NXP MRF1K50H 1500W RF Power Transistor combines the highest RF output power with superior ruggedness and thermal performance. The transistor is designed to deliver 1.50kW CW at 50V and reduces the number of transistors in high-power RF amplifiers.

NXP MRFX1K80 RF Power LDMOS Transistor combines high RF output power, superior ruggedness, and thermal performance. The MRFX1K80 Transistor is designed to deliver 1800W at 65V CW (Continuous Wave) for applications from 1MHz to 470MHz and is capable of handling 65:1 voltage standing wave ratio (VSWR).

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band, the Ampleon BLF189XR supports CO2, plasma RF, radio and VHF applications.

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band