RF Parts

Tohtsu CX140M Coax Relay, SPDT, 12Volt, UHF Female Connector

MRFE6VP61K25H
 1.8--600 MHz, 1250 W CW, 50 V,  N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 1250 Watts CW Operation

1.8--600 MHz, 300 W, 50 V, N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,at all Phase Angles• 300 Watts CW Output Power• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 300 Watts CW Operation

A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. The BLF184XR and BLF184XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 650 W pulsed; f = 108 MHz.

1W NPN 7 GHz wideband transistor in a plastic 4-pin SOT223 package

N-Channel VHF/UHF Amplifier Transistor

NPN general-purpose transistors

2SC1971 is 6W silicon NPN epixatial planar type transistor for VHF RF power amplifiers

1.8-600 MHz, 600 W CW, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

NXP MRF1K50H 1500W RF Power Transistor combines the highest RF output power with superior ruggedness and thermal performance. The transistor is designed to deliver 1.50kW CW at 50V and reduces the number of transistors in high-power RF amplifiers.

NXP MRFX1K80 RF Power LDMOS Transistor combines high RF output power, superior ruggedness, and thermal performance. The MRFX1K80 Transistor is designed to deliver 1800W at 65V CW (Continuous Wave) for applications from 1MHz to 470MHz and is capable of handling 65:1 voltage standing wave ratio (VSWR).