RF Parts

SD2942 is a gold metallized N-Channel MOSFET.
The SD2942offers 25% lower Rds(ON) than industry standard and 20% higher power saturation than ST SD2932. These characteristics make the SD2942 ideal for 50V DC very high power application up to 250 MHz.
Features
■ GOLD METALLIZATION
■ EXCELLENT THERMAL STABILITY■ COMMON SOURCE CONFIGURATION,PUSH PULL■ POUT = 350W MIN. WITH 15dB GAIN @175MHz

SD2932RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
- GOLD METALLIZATION- EXCELLENT THERMAL STABILITY- COMMON SOURCE CONFIGURATION, PUSH-PULL- POUT = 300W MIN. WITH 15 dB GAIN @175 MHz

MRFE6VP61K25H
 1.8--600 MHz, 1250 W CW, 50 V,  N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 1250 Watts CW Operation

1.8--600 MHz, 300 W, 50 V, N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,at all Phase Angles• 300 Watts CW Output Power• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 300 Watts CW Operation

RA13H3340M RF Power Module, frequency range 330-400 MHz, power output 13 Watt, operation voltage 12.5v

2SC1946A is 30W NPN transistor for VHF RF power amplifier

2SC2694 is NPN RF 70W, VHF 175MHz power transistor

2SC1972 is silicon NPN epixatial planar type transistor for VHF RF power amplifiers

1.8-600 MHz, 600 W CW, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band, the Ampleon BLF189XR supports CO2, plasma RF, radio and VHF applications.

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band