RF Parts

Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,f = 450 MHz Power Gain 22 dB Drain Efficiency 60%• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power

N–Channel MOSFETDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitter">transmitters/">transmitters for FM broadcast or TV channelfrequency bands.• Guaranteed Performance at 175 MHz, 50 V:Output Power — 300 WGain — 14 dB (16 dB Typ)Efficiency — 50%