RF Parts

4.864MHz Crystal HC-49S package to generate 19KHz pilot tone and 38KHz subcarrier in FM stereo encoders

BLF278 300W VHF push-pull power MOS transistor

BLF574 400 W LDMOS power transistor for broadcast applications and industrial applications in the HF and VHF band

BLF578 1000W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band

Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,f = 450 MHz Power Gain 22 dB Drain Efficiency 60%• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power

N–Channel MOSFETDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitter">transmitters/">transmitters for FM broadcast or TV channelfrequency bands.• Guaranteed Performance at 175 MHz, 50 V:Output Power — 300 WGain — 14 dB (16 dB Typ)Efficiency — 50%

SD2942 is a gold metallized N-Channel MOSFET.
The SD2942offers 25% lower Rds(ON) than industry standard and 20% higher power saturation than ST SD2932. These characteristics make the SD2942 ideal for 50V DC very high power application up to 250 MHz.
Features
■ GOLD METALLIZATION
■ EXCELLENT THERMAL STABILITY■ COMMON SOURCE CONFIGURATION,PUSH PULL■ POUT = 350W MIN. WITH 15dB GAIN @175MHz

SD2932RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
- GOLD METALLIZATION- EXCELLENT THERMAL STABILITY- COMMON SOURCE CONFIGURATION, PUSH-PULL- POUT = 300W MIN. WITH 15 dB GAIN @175 MHz

2SC2694 is NPN RF 70W, VHF 175MHz power transistor

2SC1972 is silicon NPN epixatial planar type transistor for VHF RF power amplifiers