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Behringer MDX2600 Composer Pro-XL Compressor mudah digunakan. Ini memiliki semua alat dasar untuk panggung suara yang optimal dan di studio ditambah penambah dinamis terintegrasi, simulasi tabung, dan filter kontur rendah. Sirkuit IKA revolusioner menggabungkan keunggulan kompresi lutut keras dan lunak dalam fungsi dinamis tunggal untuk memberikan hasil yang alami dan transparan.

IC PLL MC145170D2

YAESU FT-991A ALL-BAND, TRANSCEIVER PORTABEL MULTIMODEFT-991A adalah generasi terkini semua band transceiver MF / HF / VHF / UHF dengan kemampuan digital C4FM (System Fusion). FT-991A mencakup operasi multi-mode pada CW, AM, FM, SSB, dan Mode Digital (Paket, PSK31, RTTY dan C4FM), dengan Kemampuan HF / 50mhz 100 Watt (50 Watt VHF / UHF).

Bird 43 dirancang untuk mengukur forward and reflected CW power di jalur transmisi koaksial pada berbagai macam kondisi beban. Dengan akurasi skala penuh ± 5%, lebih dari 450 kHz ke 2,7 GHz, daya 100 mW sampai 10 KW dan mudah untuk mengganti konektor sehingga meminimalkan kebutuhan adapter konektor.

Compact Design and Reliable 5W RF Power Output (Selectable 5W/ 2.5W/ 1W/ 0.3W)

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.

RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.

RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets

Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,f = 450 MHz Power Gain 22 dB Drain Efficiency 60%• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power

N–Channel MOSFETDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV channelfrequency bands.• Guaranteed Performance at 175 MHz, 50 V:Output Power — 300 WGain — 14 dB (16 dB Typ)Efficiency — 50%

MRFE6VP61K25H
 1.8--600 MHz, 1250 W CW, 50 V,  N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 1250 Watts CW Operation