RF Parts

1.3 GHz Bidirectional I2C-bus controlled synthesizer

BLF245 30W VHF power MOS transistor

1.3 GHz Bidirectional I2C-bus controlled synthesizer, SO-20 package

BLF278 300W VHF push-pull power MOS transistor

MC145170D2 PLL Chip

BLF574 400 W LDMOS power transistor for broadcast applications and industrial applications in the HF and VHF band

BLF578 1000W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

REW-14 Russian coaxial relays is much Power up to 5-7kW (144 MHz / 2m band)

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.