Active filters

  • Brand: Mitsubishi Electric clear
  • Brand: NXP Semiconductors clear
  • Brand: ST Microelectronics clear
RD15HVF1

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.
Rp 102.000
RD30HVF1

RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.
Rp 380.000
RD70HVF1

RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets
Rp 500.000
Out-of-Stock
SD2942
Out-of-Stock

SD2942 is a gold metallized N-Channel MOSFET.
The SD2942offers 25% lower Rds(ON) than industry standard and 20% higher power saturation than ST SD2932. These characteristics make the SD2942 ideal for 50V DC very high power application up to 250 MHz.
Features
■ GOLD METALLIZATION
■ EXCELLENT THERMAL STABILITY■ COMMON SOURCE CONFIGURATION,PUSH PULL■ POUT = 350W MIN. WITH 15dB GAIN @175MHz
Rp 1.100.000
Out-of-Stock
SD2932
Out-of-Stock

SD2932RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
- GOLD METALLIZATION- EXCELLENT THERMAL STABILITY- COMMON SOURCE CONFIGURATION, PUSH-PULL- POUT = 300W MIN. WITH 15 dB GAIN @175 MHz
Rp 1.000.000
BLF184XR

A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. The BLF184XR and BLF184XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 650 W pulsed; f = 108 MHz.
Rp 2.250.000
RA13H3340M
RA13H3340M RF Power Module, frequency range 330-400 MHz, power output 13 Watt, operation voltage 12.5v
Rp 475.000
2SC1946A
2SC1946A is 30W NPN transistor for VHF RF power amplifier
Rp 280.000
Out-of-Stock
2SC2694
Out-of-Stock
2SC2694 is NPN RF 70W, VHF 175MHz power transistor
Rp 330.000
BFG591
1W NPN 7 GHz wideband transistor in a plastic 4-pin SOT223 package
Rp 17.000
MMBFJ310
N-Channel VHF/UHF Amplifier Transistor
Rp 4.000
BC847C
NPN general-purpose transistors
Rp 950