Rp 600.000
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There are 38 products.
Tohtsu CX-600N-12 Coaxial Relay
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Tohtsu CX600N-12 Coaxial relay, 12 Volt, SPDT, Type-N (3-N Female)
Rp 1.900.000
BLF188XRS
BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Rp 3.000.000
Bird 43 Wattmeter
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Bird 43 designed to measure both forward and reflected CW power in coaxial transmission lines under any load condition. With a full-scale accuracy of ± 5%, over 450 kHz to 2.7 GHz, power 100 mW to 10 KW and easy to quick change (QC) connectors to minimize the need for adaptors.
Rp 6.700.000
Tohtsu CX-140D Coaxial Relay
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Tohtsu CX140D Coax Relay, SPDT, 12Volt, Type-N Female Connector
Rp 900.000
Tohtsu CX-140M Coaxial Relay
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Tohtsu CX140M Coax Relay, SPDT, 12Volt, UHF Female Connector
Rp 750.000
BLF188XR
BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Rp 3.500.000
RD06HVF1
RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.
Rp 80.000
RD15HVF1
RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.
Rp 102.000
RD30HVF1
RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.
Rp 380.000
RD70HVF1
RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets
Rp 500.000
MRF6V4300N
Out-of-Stock
Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,f = 450 MHz Power Gain 22 dB Drain Efficiency 60%• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power
Rp 800.000
MRF151G
Out-of-Stock
N–Channel MOSFETDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitter">transmitters/">transmitters for FM broadcast or TV channelfrequency bands.• Guaranteed Performance at 175 MHz, 50 V:Output Power — 300 WGain — 14 dB (16 dB Typ)Efficiency — 50%
Rp 1.000.000