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1.3 GHz Bidirectional I2C-bus controlled synthesizer

BLF245 30W VHF power MOS transistor

1.3 GHz Bidirectional I2C-bus controlled synthesizer, SO-20 package

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Yaesu FT-991A ALL-BAND, MULTIMODE PORTABLE TRANSCEIVER
The FT-991A is the next generation in all mode, all band MF/HF/VHF/UHF transceiver with C4FM (System Fusion) Digital capability. The FT-991A includes multi-mode operation on CW, AM, FM, SSB, and Digital Modes (Packet, PSK31, RTTY and C4FM), with 100 Watts of HF/50mhz Capability (50 Watts VHF/UHF).

Bird 43 designed to measure both forward and reflected CW power in coaxial transmission lines under any load condition. With a full-scale accuracy of ± 5%, over 450 kHz to 2.7 GHz, power 100 mW to 10 KW and easy to quick change (QC) connectors to minimize the need for adaptors.

Compact Design and Reliable 5W RF Power Output (Selectable 5W/ 2.5W/ 1W/ 0.3W)

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.

RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.

RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets