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PD55015 is a 15W common source N-Channel with PowerSO-10 plastic package

ICOM changed the way hams think about mobile HC communication in 1995 with the introduction of the IC-706. Since then, the Icom Mobile HF radios have been the Performance HF mobile radio of choice. At the 2012 Tokyo Hamfair, Icom once again changed mobile HF communications by introducing the IC-7100

PD55003 is a 3W common source N-Channel with PowerSO-10 plastic package

PD55035 is a 35W common source N-Channel with PowerSO-10 plastic package

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.

RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.

RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets

SD2942 is a gold metallized N-Channel MOSFET.
The SD2942offers 25% lower Rds(ON) than industry standard and 20% higher power saturation than ST SD2932. These characteristics make the SD2942 ideal for 50V DC very high power application up to 250 MHz.
Features
■ GOLD METALLIZATION
■ EXCELLENT THERMAL STABILITY■ COMMON SOURCE CONFIGURATION,PUSH PULL■ POUT = 350W MIN. WITH 15dB GAIN @175MHz

SD2932RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
- GOLD METALLIZATION- EXCELLENT THERMAL STABILITY- COMMON SOURCE CONFIGURATION, PUSH-PULL- POUT = 300W MIN. WITH 15 dB GAIN @175 MHz

RA13H3340M RF Power Module, frequency range 330-400 MHz, power output 13 Watt, operation voltage 12.5v

2SC1946A is 30W NPN transistor for VHF RF power amplifier