Active filters

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  • Brand: Ampleon clear
  • Brand: Mitsubishi Electric clear
  • Brand: NXP Semiconductors clear
  • Brand: TOHTSU clear
BLF188XR

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Rp 3.500.000
Tohtsu CX-140D Coaxial Relay
Last items in stock
Tohtsu CX140D Coax Relay, SPDT, 12Volt, Type-N Female Connector
Rp 900.000
Tohtsu CX-140M Coaxial Relay
Last items in stock
Tohtsu CX140M Coax Relay, SPDT, 12Volt, UHF Female Connector
Rp 750.000
RD06HVF1

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.
Rp 80.000
RD15HVF1

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.
Rp 102.000
RD30HVF1

RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.
Rp 380.000
RD70HVF1

RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets
Rp 500.000
BLF184XR

A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. The BLF184XR and BLF184XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 650 W pulsed; f = 108 MHz.
Rp 2.250.000
RA13H3340M
RA13H3340M RF Power Module, frequency range 330-400 MHz, power output 13 Watt, operation voltage 12.5v
Rp 475.000
2SC1946A
2SC1946A is 30W NPN transistor for VHF RF power amplifier
Rp 280.000
Out-of-Stock
2SC2694
Out-of-Stock
2SC2694 is NPN RF 70W, VHF 175MHz power transistor
Rp 330.000
BFG591
1W NPN 7 GHz wideband transistor in a plastic 4-pin SOT223 package
Rp 17.000