RF Parts

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Tohtsu CX140D Coax Relay, SPDT, 12Volt, Type-N Female Connector

Tohtsu CX140M Coax Relay, SPDT, 12Volt, UHF Female Connector

REW-14 Russian coaxial relays is much Power up to 5-7kW (144 MHz / 2m band)

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.

RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.

RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets

Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,f = 450 MHz Power Gain 22 dB Drain Efficiency 60%• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power

N–Channel MOSFETDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitter">transmitters/">transmitters for FM broadcast or TV channelfrequency bands.• Guaranteed Performance at 175 MHz, 50 V:Output Power — 300 WGain — 14 dB (16 dB Typ)Efficiency — 50%

MRFE6VP61K25H
 1.8--600 MHz, 1250 W CW, 50 V,  N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 1250 Watts CW Operation