Rp 600.000
RF Parts
Subcategories
There are 48 products.
Crystal 4.864MHz HC-49U
4.864MHz Crystal HC-49U package to generate 19KHz pilot tone and 38KHz subcarrier in FM stereo encoders
Rp 5.000
PD55003
PD55003 is a 3W common source N-Channel with PowerSO-10 plastic package
Rp 95.000
Crystal 16MHz HC-49SMD
16MHz Quartz Crystal resonator HC-49SMD
Rp 5.000
PD55015
PD55015 is a 15W common source N-Channel with PowerSO-10 plastic package
Rp 200.000
Crystal 8MHz HC-49SMD
8MHz Quartz Crystal resonator HC-49SMD
Rp 5.000
PD55035
PD55035 is a 35W common source N-Channel with PowerSO-10 plastic package
Rp 400.000
RD06HVF1
RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.
Rp 80.000
RD15HVF1
RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.
Rp 102.000
RD30HVF1
RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.
Rp 380.000
RD70HVF1
RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets
Rp 500.000
MRF6V4300N
Out-of-Stock
Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,f = 450 MHz Power Gain 22 dB Drain Efficiency 60%• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power
Rp 800.000
MRF151G
Out-of-Stock
N–Channel MOSFETDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitter">transmitters/">transmitters for FM broadcast or TV channelfrequency bands.• Guaranteed Performance at 175 MHz, 50 V:Output Power — 300 WGain — 14 dB (16 dB Typ)Efficiency — 50%
Rp 1.000.000