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Tohtsu CX-800N-12 Coaxial Relay
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Tohtsu CX800N-12 Coaxial Relay, DPDT, Type-N (6 female), 12V
Rp 2.750.000
Tohtsu CX-800N-24 Coaxial Relay
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Tohtsu CX800N-24 Coaxial Relay, DPDT, Type-N (6 female), 24V
Rp 2.900.000
MC145170D2
MC145170D2 PLL Chip
Rp 30.000
Tohtsu CX-800M Coaxial Relay
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Tohtsu CX800M Coaxial Relay, DPDT, 12 Volt, UHF Connectors
Rp 2.750.000
Tohtsu CX-600N-12 Coaxial Relay
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Tohtsu CX600N-12 Coaxial relay, 12 Volt, SPDT, Type-N (3-N Female)
Rp 1.900.000
Tohtsu CX-140D Coaxial Relay
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Tohtsu CX140D Coax Relay, SPDT, 12Volt, Type-N Female Connector
Rp 900.000
Tohtsu CX-140M Coaxial Relay
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Tohtsu CX140M Coax Relay, SPDT, 12Volt, UHF Female Connector
Rp 750.000
RD06HVF1

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.
Rp 80.000
RD15HVF1

RD15HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiers applications.FEATURES•High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz•High Efficiency: 60%typ. on VHF Band•High Efficiency: 55%typ. on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHFBand mobile radio sets.
Rp 102.000
RD30HVF1

RD30HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURES•High power gain:Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz•High Efficiency: 60%typ.APPLICATIONFor output stage of high power amplifiers in VHF bandMobile radio sets.
Rp 380.000
RD70HVF1

RD70HVF1 is a MOS FET type transistor specificallydesigned for VHF/UHF High power amplifiersapplications.FEATURESHigh power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency: 60%typ.on VHF BandHigh Efficiency: 55%typ.on UHF BandAPPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile Radio sets
Rp 500.000
MRFE6VP61K25H
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MRFE6VP61K25H
 1.8--600 MHz, 1250 W CW, 50 V,  N--CHANNEL BROADBAND RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec• Capable of 1250 Watts CW Operation
Rp 3.000.000