Active filters

  • Brand: Mitsubishi Electric clear
  • Brand: NXP Semiconductors clear
  • Brand: ST Microelectronics clear
TSA5511

1.3 GHz Bidirectional I2C-bus controlled synthesizer
Rp 60.000
BLF245
BLF245 30W VHF power MOS transistor
Rp 700.000
TSA5511AT

1.3 GHz Bidirectional I2C-bus controlled synthesizer, SO-20 package
Rp 60.000
Out-of-Stock
BLF278
Out-of-Stock
BLF278 300W VHF push-pull power MOS transistor
Rp 1.250.000
Out-of-Stock
BLF574
Out-of-Stock
BLF574 400 W LDMOS power transistor for broadcast applications and industrial applications in the HF and VHF band
Rp 1.700.000
Out-of-Stock
BLF578
Out-of-Stock
BLF578 1000W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band
Rp 2.700.000
BLF188XRS

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Rp 3.000.000
BLF188XR

BLF188XR is a 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Rp 3.500.000
PD55003
PD55003 is a 3W common source N-Channel with PowerSO-10 plastic package
Rp 95.000
PD55015
PD55015 is a 15W common source N-Channel with PowerSO-10 plastic package
Rp 200.000
PD55035
PD55035 is a 35W common source N-Channel with PowerSO-10 plastic package
Rp 400.000
RD06HVF1

RD06HVF1 is a MOS FET type transistor specificallydesigned for VHF RF power amplifiers applications.FEATURESHigh power gain:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHzAPPLICATIONFor output stage of high power amplifiers inVHF band mobile radio sets.
Rp 80.000